Author: John D. Cressler
Publisher: CRC Press
Keywords: devices, heterostructure, silicon
Number of Pages: 472
Published: 2007-12-13
List price: $98.95
ISBN-10: 1420066900
ISBN-13: 9781420066906

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the compreh

Authors:Patrick Roblin, Hans Rohdin,
Publisher: Cambridge University Press
Keywords: devices, heterostructure, speed
Number of Pages: 600
Published: 2001-12-15
List price: $200.00
ISBN-10: 0521781523
ISBN-13: 9780521781527

High-Speed Heterostructure Devices describes modern high-speed semiconductor devices intended for both graduate students and practicing engineers. The book details the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. The emphasis is on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The authors also introduce the operating principles of other devices, including the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs. The book comes with a complete set of

Author: John D. Cressler
Publisher: CRC Press
Keywords: heterostructure, devices, silicon, epitaxy, strained, layer, sige
Number of Pages: 264
Published: 2007-12-13
List price: $79.95
ISBN-10: 1420066854
ISBN-13: 9781420066852

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the mate

Authors:Vassil Palankovski, Rüdiger Quay,
Publisher: Springer
Keywords: computational, microelectronics, devices, heterostructure, simulation, analysis
Number of Pages: 289
Published: 2004-02-17
List price: $239.00
ISBN-10: 3211405372
ISBN-13: 9783211405376

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Authors:Robert K. Willardson, Richard A. Kiehl, T. C.L. Gerh
Publisher: Academic Press
Keywords: semiconductors, semimetals, volume, devices, heterostructure, speed
Number of Pages: 454
Published: 1994-06-16
List price: $224.00
ISBN-10: 0127521410
ISBN-13: 9780127521411

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features* The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed* Offers a complete, three-chapter review of resonant tunneling* Provides an emphasis on circuits as well as devices

Author: John D. Cressler
Publisher: CRC Press
Keywords: sige, applications, strained, layer, epitaxy, circuits, devices, heterostructure, handbook, materials, fabrication, silicon
Number of Pages: 1248
Published: 2005-11-01
List price: $189.95
ISBN-10: 0849335590
ISBN-13: 9780849335594

An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.Featuring broad, comprehensive, and in-depth discussion, this handbo

Authors:E. Kasper, D.J. Paul,
Publisher: Springer
Keywords: silicon, basics, realisations, nanoscience, technology, devices, heterostructure, quantum, integrated, circuits, germanium
Number of Pages: 361
Published: 2005-05-25
List price: $179.00
ISBN-10: 354022050X
ISBN-13: 9783540220503

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-