Author: John D. Cressler
Publisher: Artech Print on Demand
Keywords: transistors, bipolar, heterojunction, germanium, silicon
Number of Pages: 589
Published: 2002-12-31
List price: $149.00
ISBN-10: 1580533612
ISBN-13: 9781580533614

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how

Authors:Cor Claeys, Eddy Simoen,
Publisher: Elsevier Science
Keywords: devices, materials, technologies, based, germanium
Number of Pages: 480
Published: 2007-05-16
List price: $170.00
ISBN-10: 0080449530
ISBN-13: 9780080449531

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and sem

Author: R. Szweda
Publisher: Elsevier Science
Keywords: amp, technology, overview, market, devices, materials, silicon, germanium
Number of Pages: 418
Published: 2002-12-10
List price: $4,440.00
ISBN-10: 1856173968
ISBN-13: 9781856173964

The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players.It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon.Silicon Germanium Materials & Devices

Authors:Raminderpal Singh, Modest M. Oprysko, David Harame,
Publisher: Wiley-IEEE Press
Keywords: design, modeling, technology, germanium, silicon
Number of Pages: 368
Published: 2003-11-10
List price: $142.50
ISBN-10: 047144653X
ISBN-13: 9780471446538

"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." –Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." –Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems I

Authors:John C. Bean, Robert Hull,
Publisher: Academic Press
Keywords: semiconductors, semimetals, volume, materials, silicon, physics, germanium
Number of Pages: 444
Published: 1998-11-16
List price: $224.00
ISBN-10: 012752164X
ISBN-13: 9780127521640

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series.

Authors:Cor Claeys, Eddy Simoen,
Publisher: Springer
Keywords: springer, series, materials, science, aspects, technological, defects, germanium, fundamental, extended
Number of Pages: 320
Published: 2009-02-18
List price: $164.95
ISBN-10: 3540856110
ISBN-13: 9783540856115

The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical p

Author: S. Pantellide
Publisher: CRC Pre
Keywords: properties, applications, optoelectronic, semiconductors, superlattices, growth, germanium, carbon, alloys, silicon
Number of Pages: 560
Published: 2002-07-26
List price: $272.95
ISBN-10: 1560329637
ISBN-13: 9781560329633

Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent mate